Transferred-electron induced current instabilities in heterojunction bipolar transistors
نویسندگان
چکیده
Current driven instabilities in the collector of III–V heterojunction bipolar transistors ~HBT! are investigated. Numerical simulations indicate that in a modified AlGaAs/GaAs HBT the collector current shows oscillatory behavior due to the transferred-electron ~Gunn–Hilsum! effect. Influence of the Kirk effect as well as conditions for oscillation are discussed. © 1995 American Institute of Physics.
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